MRF101AN Image

MRF101AN

RF Transistor by NXP Semiconductors (247 more products)

The MRF101AN from NXP is an LDMOS transistor that operates from 1.8 to 230 MHz. The transistor provides up to 100 watts of Continuous Wave (CW) power with a gain of 28 dB and an efficiency of 79%. This transistor has been developed for use in unforgiving industrial, scientific and medical applications and can withstand 65:1 Voltage Standing Wave Ratio (VSWR).

While current plastic packages for high power RF require a precise solder reflow process, this transistor can be assembled to a printed circuit board (PCB) using standard through-hole technology, reducing costs. Heatsinking is also simplified since the transistor can be mounted vertically to a chassis, or in more creative and versatile ways such as under the PCB. This opens many options for the mechanical design, contributing to lower the Bill of Materials (BoM) and reduce time to market. It is available in a TO-220 package.

Product Specifications

    Product Details

    • Part Number :
      MRF101AN
    • Manufacturer :
      NXP Semiconductors
    • Description :
      100 W LDMOS RF Transistor

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Broadcast, Aerospace & Defence, ISM, Radar
    • Application Type :
      ISM
    • Application :
      Radio, Broadcast, Sub-GHz
    • CW/Pulse :
      CW, Pulse
    • Power :
      50 dBm
    • Power(W) :
      100 W
    • Package :
      TO-220

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