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The SK722 from Polyfet RF Devices is a RF Transistor with Power 46 dBm, Power(W) 40 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flanged. More details for SK722 can be seen below.
300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
330 W GaN on SiC HEMT from 2.3 to 2.5 GHz
4-Way Power Divider/Combiner from 2 to 4.2 GHz
10 dB Directional Coupler from 380 to 960 MHz
RF Shield Test Box on Wheels from 20 MHz to 12 GHz
10 MHz Space-Qualified Oven Controlled Crystal Oscillator (OCXO)
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