Note : Your request will be directed to Polyfet RF Devices.
The SK722 from Polyfet RF Devices is a RF Transistor with Power 46 dBm, Power(W) 40 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flange. More details for SK722 can be seen below.
850 W GaN-on-SiC Power Transistor from 400 to 450 MHz
280 W GaN HEMT from 1.03 to 1.09 GHz
35 W LDMOS Power Transistor from 1 to 650 MHz
25 W Unmatched GaN Transistor from DC to 5 GHz
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