The MMRF1317H from NXP Semiconductors is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power(W) 1288.25 W, P1dB 61.1 dBm, Duty_Cycle 0.1, Power Gain (Gp) 17.4 to 19.1 dB. Tags: Flange. More details for MMRF1317H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1317H
  • Manufacturer
    NXP Semiconductors
  • Description
    RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    Avionics, Commercial, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power(W)
    1288.25 W
  • P1dB
    61.1 dBm
  • Peak Output Power
    1300 W
  • Pulsed Power
    1100 to 1300 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    17.4 to 19.1 dB
  • Input Return Loss
    -12 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.56
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.019 °C/W
  • Package Type
    Flange
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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