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STAC1011-500

RF Transistor by STMicroelectronics (2 more products)

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The STAC1011-500 from ST Microelectronics is an RF LDMOS Power Transistor that operates from 1030 to 1090 MHz. It delivers an output power of 500 watts with a gain of 16 dB and a drain efficiency of 59%. The device requires a supply voltage of 50 V and features ESD protection. This common-source N-channel enhancement-mode lateral field-effect RF power transistor has been designed for avionics applications and is available in an ECOPACK package. It is in compliance with the European Directive 2002/95/EC.

Product Specifications

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Product Details

  • Part Number
    STAC1011-500
  • Manufacturer
    STMicroelectronics
  • Description
    500 W RF LDMOS Power Transistor from 1030 to 1090 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Aerospace & Defence, SATCOM
  • Application
    Avionics
  • Frequency
    1030 to 1090 MHz
  • Power
    56.99 dBm
  • Power(W)
    500 W
  • Gain
    16 dB
  • VSWR
    10:1
  • Features
    High efficiency and linear gain operations, Integrated ESD protection
  • Polarity
    N - Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 V (Gate)
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Drain-Source (Vdss)
    110 V
  • Voltage - Gate-Source (Vgs)
    -8 to 10 V
  • Drain Efficiency
    59 Percent
  • Drain Current
    1 uA
  • Feedback Capacitance
    2 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    44 pF
  • Grade
    Commercial, Military
  • Storage Temperature
    -65 to 150 Degree C

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