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The IGN1214L125 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 50.97 dBm, Power(W) 125.03 W, Duty_Cycle 0.2, Gain 18 dB. Tags: Flanged. More details for IGN1214L125 can be seen below.
410 W, GaN on SiC HEMT from 3.7 to 4.1 GHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
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