IGN1214M60

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IGN1214M60 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 47.78 to 50 dBm, Power(W) 100 W, Duty_Cycle 0.1, Gain 19 dB. More details for IGN1214M60 can be seen below.

Product Specifications

  • Part Number
    IGN1214M60
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1200 to 1400 MHz, 19 dB GaN Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    47.78 to 50 dBm
  • Power(W)
    100 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    19 dB
  • Power Gain (Gp)
    18.75 to 20.97 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.5 V
  • Input Power
    0.8 W
  • Quiescent Drain Current
    50 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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