IGN1214M500

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IGN1214M500 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 56.99 to 58.45 dBm, Power(W) 699.84 W, Duty_Cycle 0.1, Gain 14 dB. Tags: Flange. More details for IGN1214M500 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IGN1214M500
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      1200 to 1400 MHz, 14.5 dB GaN Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application :
      L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.2 to 1.4 GHz
    • Power :
      56.99 to 58.45 dBm
    • Power(W) :
      699.84 W
    • Pulsed Width :
      300 us
    • Duty_Cycle :
      0.1
    • Gain :
      14 dB
    • Power Gain (Gp) :
      12.84 to 14.30 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.8 V
    • Input Power :
      26 W
    • Quiescent Drain Current :
      190 to 210 mA
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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