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QPD0050

RF Transistor by Qorvo

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The QPD0050 from Qorvo is a single stage unmatched GaN RF power transistor that operates from DC to 3.6 GHz. It provides an output power of 75 watts with a gain of 19.4 dB and an efficiency of 77.9%. This transistor requires 48 volts of power supply and is available in a surface mount plastic package that measures 6.6 x 7.7 mm. The QPD0050 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0050 can also be used as a driver in power amplifiers for macrocell base stations.

Product Specifications

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Product Details

  • Part Number
    QPD0050
  • Manufacturer
    Qorvo
  • Description
    75 W GAN Transistor from DC to 3.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, WCDMA, LTE, Small Cells & Active Antenna
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.6 GHz
  • Power
    49 dBm
  • Power(W)
    79.4 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    3dB Compression 19.5 dB
  • Supply Voltage
    48 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Quiescent Drain Current
    130 mA
  • Package Type
    Surface Mount
  • Dimension
    6.6 X 7.7 mm
  • RoHS
    Yes

Technical Documents

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