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RF3L05150CB4

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RF3L05150CB4 Image

The RF3L05150CB4 from STMicroelectronics is a RF Transistor with Frequency 1000 MHz, Power 51.76 dBm, Power(W) 150 W, Duty_Cycle 10%, Power Gain (Gp) 23 dB. Tags: Flanged. More details for RF3L05150CB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF3L05150CB4
  • Manufacturer
    STMicroelectronics
  • Description
    150 W, LDMOS RF Transistor operating at 1000 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics, Commercial, Wireless Infrastructure
  • Application
    Communication System, Commercial, Jammers, Test & Instrumentation
  • CW/Pulse
    Pulse
  • Frequency
    1000 MHz
  • Power
    51.76 dBm
  • Power(W)
    150 W
  • Pulsed Width
    20 µs
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    23 dB
  • VSWR
    20.00:1
  • Supply Voltage
    28 V / 32 V
  • Threshold Voltage
    1.75 to 2.50 V
  • Drain Gate Voltage
    1.75
  • Breakdown Voltage - Drain-Source
    90 V
  • Voltage - Drain-Source (Vdss)
    650 mV
  • Drain Efficiency
    0.6
  • Drain Current
    2.5 A
  • Drain Bias Current
    2.5
  • Drain Leakage Current (Id)
    1 µA
  • Gate Leakage Current (Ig)
    ±100 nA
  • Feedback Capacitance
    1.1 pF
  • Input Capacitance
    70 pF
  • Junction Temperature (Tj)
    200 Degrees
  • On Resistance
    1 Ohms
  • Output Capacitance
    30 pF
  • Thermal Resistance
    0.4 Degree C/W
  • Package Type
    Flanged
  • Grade
    Commercial
  • Operating Temperature
    25 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
  • Note
    Gate quiescent voltage: 2 to 5 V
View details on the manufacturer's website
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