BLA6G1011LS-200RG Image

BLA6G1011LS-200RG

RF Transistor by Ampleon (238 more products)

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The BLA6G1011LS-200RG from Ampleon is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 53.01 dBm, Power(W) 199.99 W, Power Gain (Gp) 18 to 20 dB, VSWR 10.00:1. More details for BLA6G1011LS-200RG can be seen below.

Product Specifications

  • Part Number
    BLA6G1011LS-200RG
  • Manufacturer
    Ampleon
  • Description
    53.01 dBm (200 W), LDMOS Transistor from 1030 to 1090 MHz
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avoincs
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • Power Gain (Gp)
    18 to 20 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.4 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Efficiency
    0.65
  • Drain Current
    100 mA
  • Drain Bias Current
    49 A
  • Package Type
    Surface Mount
  • Package
    SOT502C
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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