IDM500CW200 Image

IDM500CW200

Note : Your request will be directed to Integra Technologies, Inc..

The IDM500CW200 from Integra Technologies, Inc. is a RF Transistor with Frequency 1 to 500 MHz, Power 53.01 dBm, Power(W) 199.99 W, Gain 11 dB, Power Gain (Gp) 10 dB. Tags: Flange. More details for IDM500CW200 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IDM500CW200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1 to 500 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    UHF, VHF
  • CW/Pulse
    CW
  • Frequency
    1 to 500 MHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • Gain
    11 dB
  • Power Gain (Gp)
    10 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 V
  • Breakdown Voltage - Drain-Source
    70 to 100 V
  • Drain Efficiency
    0.5
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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