MRF275L Image

MRF275L

RF Transistor by MACOM

Note : Your request will be directed to MACOM.

The MRF275L from MACOM is a RF Transistor with Frequency 5 to 500 MHz, Power 50 dBm, Power(W) 100 W, Gain 8.8 dB, Power Gain (Gp) 8.8 dB. Tags: Flange. More details for MRF275L can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF275L
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM, Broadcast
  • Application
    Avionics, Communication, Commercial, Military, Medical
  • CW/Pulse
    CW
  • Frequency
    5 to 500 MHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Gain
    8.8 dB
  • Power Gain (Gp)
    8.8 dB
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 4.5 Vdc
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    20 Vdc
  • Leakage Current
    1 µAdc (Gate body leakage)
  • Package Type
    Flange
  • Package
    Flange Ceramic

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