BLF0910H9LS600 Image

BLF0910H9LS600

RF Transistor by Ampleon (239 more products)

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The BLF0910H9LS600 from Ampleon is a 600 Watt LDMOS power amplifier transistor for RF energy applications that operates from 900 to 930 MHz. This transistor has been developed on Ampleon&rsquos latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It provides a high gain of typically 19.8 dB with an efficiency of typically above 68 %. It has integrated ESD protection and internal input matching. The matching increases the transistor input impedance and simplifies the design of the PCB matching structures to facilitate a compact amplifier design.

Two BLF0910H9LS600 can be cascaded to provide a 1.2 KW RF power amplifier in the same space as a single SOT539 package.

Product Specifications

    Product Details

    • Part Number :
      BLF0910H9LS600
    • Manufacturer :
      Ampleon
    • Description :
      600 Watt LDMOS Transistor for RF Energy Applications

    General Parameters

    • Transistor Type :
      LDMOS
    • Application Industry :
      ISM
    • Application :
      Industrial, RF energy, ISM Band
    • CW/Pulse :
      CW
    • Frequency :
      900 to 930 MHz
    • Power :
      57.78 dBm
    • Power(W) :
      600 W
    • Gain :
      19.8 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      1.5 to 2.5 V
    • Breakdown Voltage - Drain-Source :
      108 V
    • Voltage - Gate-Source (Vgs) :
      -6 to 11 V
    • Drain Efficiency :
      62 to 65.7 %
    • Drain Leakage Current (Id) :
      2.8 uA
    • Gate Leakage Current (Ig) :
      280 nA
    • Junction Temperature (Tj) :
      225 Degree C
    • Package Type :
      Flanged
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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