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BLF978P

RF Transistor by Ampleon (268 more products)

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The BLF978P from Ampleon is an LDMOS Power Transistor that operates from 10 to 700 MHz. It delivers a P1dB of 1200 watts with a power gain of over 23 dB and a drain efficiency of 80.6%. The device requires a supply voltage of 50 V and has integrated ESD protection. This PA is available in a flanged balanced ceramic package and is ideal for use in broadcast transmitters, and for ISM applications.

Product Specifications

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Product Details

  • Part Number
    BLF978P
  • Manufacturer
    Ampleon
  • Description
    1200 Watt LDMOS Power Transistor from 10 to 700 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Broadcast
  • Application
    Industrial, scientific and medical applications, Broadcast transmitter applications
  • CW/Pulse
    CW, Pulse
  • Frequency
    10 to 700 MHz
  • Power
    60.79 dBm
  • Power(W)
    1200 W
  • Power Gain (Gp)
    23 to 24.5 dB
  • Input Return Loss
    -20 to -12 dB
  • VSWR
    13:1
  • Class
    Class AB
  • Features
    Easy power control, Integrated ESD protection, High efficiency, Excellent thermal stability
  • Threshold Voltage
    1.5 to 2.5 V (gate-source)
  • Breakdown Voltage - Drain-Source
    108 V
  • Voltage - Drain-Source (Vdss)
    108 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11 V
  • Drain Efficiency
    78 to 80.6 Percent
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Lead Free
    Yes
  • Feedback Capacitance
    1.45 pF
  • Input Capacitance
    392 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    115 pF
  • Package Type
    Ceramic
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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