BLM9H0610S-60PG Image

BLM9H0610S-60PG

RF Transistor by Ampleon

Note : Your request will be directed to Ampleon.

The BLM9H0610S-60PG from Ampleon is a 2-Stage LDMOS Power MMIC that operates from 600 to 1000 MHz. It provides a P1dB of 61.4 W with a gain of 38.1 dB and has a drain efficiency of 69.1%. The device uses Ampleon’s state-of-the-art GEN9 HV LDMMIC technology and provides high section-to-section isolation enabling multiple transistor combinations along with integrated ESD protection. It is available in a 16-lead package that measures 20.57 x 9.78 x 3.92 mm and is suitable for W-CDMA base stations.

Product Specifications

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Product Details

  • Part Number
    BLM9H0610S-60PG
  • Manufacturer
    Ampleon
  • Description
    61 W LDMOS 2-Stage Power MMIC from 600 to 1000 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    W-CDMA, Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    0.6 to 1 GHz
  • Power
    47.67 dBm
  • Power(W)
    58.5 W
  • P1dB
    61.4 W
  • Power Gain (Gp)
    34 to 38.1 dB
  • Input Return Loss
    -18 to -11 dB
  • Class
    Class AB
  • Features
    Designed for broadband operation, High section-to-section isolation enabling multiple combinations, Integrated ESD protection, Excellent thermal stability
  • Breakdown Voltage - Drain-Source
    108 V
  • Voltage - Drain-Source (Vdss)
    108 V
  • Voltage - Gate-Source (Vgs)
    -6 to 13 V
  • Drain Efficiency
    8 to 69.1 Percent
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    isolation - 29 dB,

Technical Documents

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