The AFT05MS004N is a high gain amplifier that operates from 136 to 941 MHs. It has exceptional ruggedness at a 65:1 VSWR survivability rating for continuous reliable operation in extreme environments. The device is available in a cost-effective SOT-89 plastic package and is part of Freescale product longevity program. The AFT05MS004N is ideal for a wide range of applications including public safety radios, professional mobile radios, electric metering, M2M communications and industrial drivers.

Product Specifications

  • Part Number
    AFT05MS004N
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    136 to 941 MHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • CW Power
    4 W
  • P1dB
    36 dBm
  • Power Gain (Gp)
    20.9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    7.5 V
  • Threshold Voltage
    1.7 to 2.5 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.749
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    4.4 °C/W
  • Package Type
    Surface Mount
  • Package
    SOT--89
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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