AFM906N Image

AFM906N

RF Transistor by NXP Semiconductors

The AFM906N from NXP Semiconductors is an airfast RF power LDMOS transistor that operates from 136 to 941 MHz. The Transistor provides an output power of 6.5 watts and a gain of 16.2 dB with an efficiency of 62%. It requires a supply voltage from 7.5 V DC and has a VSWR of 65:1. The AFM906N is ideal for large-signal, common-source amplifier applications in handheld radio equipment.

Product Specifications

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Product Details

  • Part Number
    AFM906N
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6 W, 7.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio, VHF, HF
  • CW/Pulse
    CW
  • Frequency
    136 to 941 MHz
  • Power
    38.33 dBm
  • Power(W)
    6.81 W
  • CW Power
    1 W
  • P1dB
    37.8 dBm
  • Power Gain (Gp)
    20.3 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    7.5 V
  • Threshold Voltage
    1.7 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.708
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.9 °C/W
  • Package Type
    Surface Mount
  • Package
    DFN 4 x 6
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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