The AFT05MS006N is a 6 Watt LDMOS RF Transistor developed for handheld mobile radio applications. It operates from 136 MHz to 941 MHz and requires a 7.5 V supply voltage. The transistor Survives 65:1 VSWR with simultaneous over voltage and overdrive. It has a high gain and high efficiency of over 60%. Reference circuits available for VHF, UHF and 800 MHz bands. The device is extremely rugged, enabling optimal performance even in harsh operating conditions such as public safety, professional mobile radio and machine-to-machine communications environments. Though this transistor has been targeted for handheld mobile radio applications, it can also be used as a driver in higher powered mobile radio solutions as well.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    136 to 941 MHz, 6 Watt RF Transistor or Handheld Mobile Radio Applications
  • Transistor Type
  • Polarity
  • Application
  • Application Type
    Mobile Radio
  • Frequency
    136 to 941 MHz
  • Gain
    15.2 to 16.3 dB
  • Power
    37.78 to 38.26 dBm
  • Input Power
    0.15 to 0.20 W
  • Supply Voltage
    7.5 V
  • Power Added Effeciency
    Greater than 60%
  • Voltage - Drain-Source (Vdss)
    0.15 V
  • Voltage - Gate-Source (Vgs)
    1.8 to 2.6 V
  • Package Type
    Tape, Reel
  • Package
    Surface Mount
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