The AFT05MS006N is a 6 Watt LDMOS RF Transistor developed for handheld mobile radio applications. It operates from 136 MHz to 941 MHz and requires a 7.5 V supply voltage. The transistor Survives 65:1 VSWR with simultaneous over voltage and overdrive. It has a high gain and high efficiency of over 60%. Reference circuits available for VHF, UHF and 800 MHz bands. The device is extremely rugged, enabling optimal performance even in harsh operating conditions such as public safety, professional mobile radio and machine-to-machine communications environments. Though this transistor has been targeted for handheld mobile radio applications, it can also be used as a driver in higher powered mobile radio solutions as well.

Product Specifications

  • Part Number
    AFT05MS006N
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistor, 136-941 MHz, 6 W, 7.5 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    136 to 941 MHz
  • Power
    37.78 dBm
  • Power(W)
    6 W
  • CW Power
    6 W
  • P1dB
    37.8 dBm
  • Power Gain (Gp)
    20.9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    7.5 V
  • Threshold Voltage
    1.8 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.73
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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