CGHV60040D

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGHV60040D from CREE is a GaN HEMT die that operates up to 6 GHz. It can provide up to 40 W of power with a small signal gain of 17 dB and has a PAE of 65 %. The transistor requires a supply of 50 V and has high breakdown voltage property. It can be used in broadband amplifiers, Milcom, Radar, Telecom and data link & Tactical data link applications.

Product Specifications

  • Part Number
    CGHV60040D
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    40-W, 6.0-GHz, GaN HEMT Die
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • Application
    Cellular, WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
    Pulse
  • Frequency
    DC to 6 GHz
  • Power(W)
    39.99 W
  • Saturated Power
    46.02 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    17 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.65
  • Drain Current
    65 mA
  • Drain Bias Current
    4.2 to 5.2 A
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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