CGH25120F Image


RF Transistor by Wolfspeed (65 more products)

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TheCGH25120F is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 2300 to 2700 MHz and a gain of 13 dB. This Gan Transistor can provide an output power of up to 120 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
  • Transistor Type
  • Application Industry
    Telecom, Milcom
  • Application Type
    Data Link, UAV
  • Grade
    Military, Aerospace, Commercial
  • Frequency
    2300 to 2700 MHz
  • Gain
    13 dB
  • Power
    120 W
  • Power Added Effeciency
  • Technology
  • Package
    Ceramic, Flanged
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