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The CGHV31500F1 from Wolfspeed is an S-Band GaN HEMT that operates from 2.7 to 3.1 GHz. It delivers a saturated output power of 500 W with a small-signal gain of 14.5 dB and drain efficiency of up to 71%. The transistor is based on Wolfpeed’s high power density 50 V, 0.4 μm GaN on silicon carbide (SiC) manufacturing process. It has been developed with long pulse capability to meet the developing trends in radar architectures. The device has a maximum pulse width of 2000 μS with a duty cycle of 20%. It is available in a ceramic/metal flange package of type 440226 and is ideal for civil and military pulsed radar amplifier applications.
800 W LDMOS Power Transistor from 1 to 650 MHz
520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications
2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
195 W Surface-Mount GaN Power Transistor from 1880 to 2025 MHz
28 W GaN Transistor from DC to 6 GHz for Open RAN Applications
347 W GaN Power Transistor from 2.3 to 2.5 GHz
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