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The CGHV31500F1 from Wolfspeed is an S-Band GaN HEMT that operates from 2.7 to 3.1 GHz. It delivers a saturated output power of 500 W with a small-signal gain of 14.5 dB and drain efficiency of up to 71%. The transistor is based on Wolfpeed’s high power density 50 V, 0.4 μm GaN on silicon carbide (SiC) manufacturing process. It has been developed with long pulse capability to meet the developing trends in radar architectures. The device has a maximum pulse width of 2000 μS with a duty cycle of 20%. It is available in a ceramic/metal flange package of type 440226 and is ideal for civil and military pulsed radar amplifier applications.
2-Stage Asymmetrical Doherty LDMOS FET from 2.3 to 2.7 GHz
300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
SP4T Absorptive Switch from 0.5 to 40 GHz
Surface Mount Conical RF Chokes from 1.3 to 3.5 uH
10 dB Directional Coupler from 380 to 960 MHz
4-Way Power Divider/Combiner from 2 to 4.2 GHz
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