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GTRA214602FC

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTRA214602FC from Wolfspeed is a GaN on SiC High Electron Mobility Transistor (HEMT) that operates from 2.11 to 2.17 GHz. It delivers an output power of 490 W (P3dB) with a gain of 14.4 dB and has an efficiency of 59%. This GaN on SiC HEMT requires a supply voltage of 48 V and draws 150 mA of current. It has a pulse width of 16 µs and a duty cycle of 10%. This RoHS-compliant amplifier is available in a thermally enhanced package with an earless flange and is designed for multi-standard cellular power amplification.

Product Specifications

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Product Details

  • Part Number
    GTRA214602FC
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    490 W GaN HEMT Transistor from 2.11 to 2.17 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    Multi-standard cellular power amplifier applications
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.11 to 2.17 GHz
  • Power
    56.9 dBm
  • Power(W)
    490 W
  • Pulsed Width
    16 µs
  • Duty_Cycle
    10 %
  • Gain
    13 to 14.4 dB
  • Class
    Class 1B
  • Features
    Low Thermal Resistance
  • Supply Voltage
    48 V
  • Current
    150 mA
  • Drain Efficiency
    56 to 59 %
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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