GTRA362002FC-V1 Image

GTRA362002FC-V1

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTRA362002FC-V1 from Wolfspeed is a GaN on SiC HEMT that operates from 3.3 to 3.6 GHz. It provides an average power of 29 W  with a gain of 13.5 dB and an efficiency of 42% while operating from 48 V supply. This device is available in a thermally-enhanced surface mount package with earless flange and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    GTRA362002FC-V1
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    29 W RF GaN on SiC HEMT from 3.3 to 3.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular
  • CW/Pulse
    CW
  • Frequency
    3400 to 3600 MHz
  • Power
    53.01 dBm
  • Power(W)
    200 W
  • Gain
    12.5 to 13.5 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    125 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    38% to 42%
  • Drain Leakage Current (Id)
    5 mA
  • Junction Temperature (Tj)
    225 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents

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