GTRA362002FC-V1 Image

GTRA362002FC-V1

RF Transistor by Wolfspeed, A Cree Company | Visit website (90 more products)

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The GTRA362002FC-V1 from Wolfspeed is a GaN on SiC HEMT that operates from 3.3 to 3.6 GHz. It provides an average power of 29 W  with a gain of 13.5 dB and an efficiency of 42% while operating from 48 V supply. This device is available in a thermally-enhanced surface mount package with earless flange and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

    Product Details

    • Part Number :
      GTRA362002FC-V1
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      29 W RF GaN on SiC HEMT from 3.3 to 3.6 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Cellular
    • CW/Pulse :
      CW
    • Frequency :
      3400 to 3600 MHz
    • Power :
      53.01 dBm
    • Power(W) :
      200 W
    • Gain :
      12.5 to 13.5 dB
    • Supply Voltage :
      50 V
    • Breakdown Voltage - Drain-Source :
      150 V
    • Voltage - Drain-Source (Vdss) :
      125 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      38% to 42%
    • Drain Leakage Current (Id) :
      5 mA
    • Junction Temperature (Tj) :
      225 Degrees C
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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