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GRF0005

RF Transistor by Guerrilla RF
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The GRF0005 from Guerrilla RF is a RF Transistor with Frequency DC to 12 GHz, Power 36.99 to 38.7 dBm, Power(W) 5 to 7.41 W, Saturated Power 38.7 dBm, Duty_Cycle 0.1. Tags: Surface Mount. More details for GRF0005 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GRF0005
  • Manufacturer
    Guerrilla RF
  • Description
    5 W, HEMT, GaN on SiC Transistor from DC to 12 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Cellular View all
  • Application
    Test & Instrumentation View all
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 12 GHz
  • Power
    36.99 to 38.7 dBm
  • Power(W)
    5 to 7.41 W
  • Saturated Power
    38.7 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    17 dB(Small gain), 18.9 dB(Saturated gain), 21.6 dB(Power gain)
  • Small Signal Gain
    17 dB
  • Power Gain (Gp)
    21.6 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    -3.4 to -1.5 V
  • Breakdown Voltage - Drain-Source
    50 V
  • Voltage - Drain-Source (Vdss)
    28 to 50 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Current
    20 mA
  • Drain Efficiency
    0.487
  • Drain Current
    306 mA
  • Drain Leakage Current (Id)
    10 uA
  • Quiescent Drain Current
    20 mA
  • Gate Leakage Current (Ig)
    1uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount View all
  • Package
    QFN 16 package
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Impedance: 50 Ohms, Gate Current: 1 uA

Technical Documents
View details on the manufacturer's website
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