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WST4100D

RF Transistor by MACOM
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The WST4100D from MACOM is a RF Transistor with Frequency DC to 8 GHz, Power 43 to 44.8 dBm, Power(W) 19.95 to 30.20 W, Saturated Power 19.95 to 30.20 W, Gain 6 to 22.5 dB. Tags: Die. More details for WST4100D can be seen below.

Product Specifications

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Product Details

  • Part Number
    WST4100D
  • Manufacturer
    MACOM
  • Description
    GaN on SiC Transistor Operating from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Cellular, Radar
  • Application
    Radio, Amplifiers, Test & Instrumentation, OFDM, WCDMA, EDGE, CDMA, Electronic Warfare
  • CW/Pulse
    CW View all
  • Frequency
    DC to 8 GHz
  • Power
    43 to 44.8 dBm
  • Power(W)
    19.95 to 30.20 W
  • Saturated Power
    19.95 to 30.20 W
  • Gain
    6 to 22.5 dB
  • Class
    A, AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.6 to -1.6 V
  • Drain Gate Voltage
    Quiescent Voltage : -1.8 V
  • Breakdown Voltage - Drain-Source
    84 V
  • Voltage - Drain-Source (Vdss)
    84 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Current
    100 mA
  • Drain Efficiency
    55 to 87%
  • Drain Current
    1.5 A
  • Gate Leakage Current (Ig)
    4 mA(Gate Current)
  • Junction Temperature (Tj)
    225 Degree C
  • On Resistance
    0.3 to 0.44 Ohms
  • Thermal Resistance
    5.1 Degree C/W
  • Package Type
    Die View all
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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