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GRF0010D

RF Transistor by Guerrilla RF
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The GRF0010D from Guerrilla RF is a GaN HEMT that operates from DC to 8 GHz. It delivers a single-tone pulsed CW output power of 15 W (42.23 dBm) at 10% duty cycle, 100 µs pulse width, with a gain of up to 24.8 dB and an efficiency of 73.4%. This transistor requires a DC supply of 18 or 50 V and consumes 15 mA of current. It is available in a bare die package that measures 0.905 x 0.755 x 0.75 mm. This HEMT is ideal for cellular infrastructure, radar, communications, and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    GRF0010D
  • Manufacturer
    Guerrilla RF
  • Description
    15 W GaN HEMT from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Radar, Test & Measurement, Wireless Infrastructure
  • Application
    Communication Sytem, Test & Instrumentation
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 8 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Pulsed Width
    100 µs
  • Duty_Cycle
    10 %
  • Gain
    11.8 to 24.8 dB
  • Efficiency
    56.2 to 73.4 %
  • Supply Voltage
    28 or 50 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Quiescent Drain Current
    15 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die View all
  • Dimension
    0.905 x 0.755 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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