IB0607S1000

RF Transistor by Integra Technologies, Inc. (204 more products)

Note : Your request will be directed to Integra Technologies, Inc..

The IB0607S1000 from Integra Technologies, Inc. is a RF Transistor with Frequency 653 to 687 MHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.02, Gain 9.3 dB. Tags: Flanged. More details for IB0607S1000 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IB0607S1000
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      653 to 687 MHz, Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, UHF
    • CW/Pulse :
      Pulse
    • Frequency :
      653 to 687 MHz
    • Power :
      60 dBm
    • Power(W) :
      1000 W
    • Peak Output Power :
      1000 W
    • Pulsed Width :
      20 us
    • Duty_Cycle :
      0.02
    • Gain :
      9.3 dB
    • Power Gain (Gp) :
      9 to 13 dB
    • Supply Voltage :
      50 V
    • Breakdown Voltage :
      75 V (Collector Emmiter)
    • Drain Efficiency :
      0.5
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flanged
    • Operating Temperature :
      -60 to 200 Degree C
    • Storage Temperature :
      -60 to 150 Degree C

    Technical Documents

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