IB1011M70

RF Transistor by Integra Technologies, Inc. (199 more products)

Note : Your Quotation Request will be directed to Integra Technologies, Inc..

The IB1011M70 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 48.54 to 50.04 dBm, Power(W) 100.93 W, Gain 9.2 dB, Power Gain (Gp) 9 to 10.5 dB. More details for IB1011M70 can be seen below.

Product Specifications

  • Part Number
    IB1011M70
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 9.2 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    48.54 to 50.04 dBm
  • Power(W)
    100.93 W
  • Peak Output Power
    70 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    9.2 dB
  • Power Gain (Gp)
    9 to 10.5 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.