IGN1011M600 Image

IGN1011M600

Note : Your request will be directed to Integra Technologies, Inc..

The IGN1011M600 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.030 to 1.090 GHz, Power 57.78 dBm, Power(W) 599.79 W, Duty_Cycle 0.02, Gain 16 dB. Tags: Flange. More details for IGN1011M600 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1011M600
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.030 to 1.090 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.030 to 1.090 GHz
  • Power
    57.78 dBm
  • Power(W)
    599.79 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.02
  • Gain
    16 dB
  • Power Gain (Gp)
    15 to 17 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    12 to 19 W
  • Quiescent Drain Current
    80 to 100 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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