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IGN1011S250

RF Transistor by Integra Technologies, Inc.
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The IGN1011S250 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 53.98 dBm, Power(W) 250 W, Duty_Cycle 4%, Gain 17 to 21 dB. Tags: Flanged, Ceramic. More details for IGN1011S250 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1011S250
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    L-Band, GaN/SiC HEMT RF Power Transistor from 1.03 to 1.09 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Avionics View all
  • Application
    L Band, IFF, SSR
  • CW/Pulse
    Pulse View all
  • Frequency
    1.03 to 1.09 GHz
  • Power
    53.98 dBm
  • Power(W)
    250 W
  • Peak Output Power
    250 W
  • Pulsed Width
    32 uS
  • Duty_Cycle
    4%
  • Gain
    17 to 21 dB
  • Efficiency
    68%
  • Input Return Loss
    8 to 20 dB
  • VSWR
    2.00:1, 5.00:1
  • Supply Voltage
    50 V
  • Input Power
    10 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    55 to 75 %
  • Drain Current
    12.5 A
  • Thermal Resistance
    0.3 Degree C/W
  • Package Type
    Flanged, Ceramic
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Operating Temperature
    -55 to 225 Degree C
  • Storage Temperature
    -62 to 150 Degree C
  • Note
    DC Gate Current: 12.5 mA, Pulse droop: -0.4 to 0.2 dB, Gate Pinch-Off Voltage: -5V

Technical Documents
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