IGN2735M250

RF Transistor by Integra Technologies, Inc. (199 more products)

Note : Your Quotation Request will be directed to Integra Technologies, Inc..

The IGN2735M250 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3.5 GHz, Power 43.98 dBm, Power(W) 25 W, Duty_Cycle 0.1, Gain 10 dB. More details for IGN2735M250 can be seen below.

Product Specifications

  • Part Number
    IGN2735M250
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2700 to 3500 MHz, 10 dB GaN Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    S Band
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.5 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • Peak Output Power
    250 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    10 dB
  • Power Gain (Gp)
    10 to 13 dB
  • Supply Voltage
    32 V
  • Threshold Voltage
    -4 to -3.5 V
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.