ILD1011M160HV

RF Transistor by Integra Technologies, Inc. (199 more products)

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The ILD1011M160HV from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 52.04 to 54.52 dBm, Power(W) 283.14 W, Duty_Cycle 0.02, Gain 16.5 dB. More details for ILD1011M160HV can be seen below.

Product Specifications

  • Part Number
    ILD1011M160HV
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 to 1090 MHz, 16.5 dB LDMOS Transistor
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    52.04 to 54.52 dBm
  • Power(W)
    283.14 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    0.02
  • Gain
    16.5 dB
  • Power Gain (Gp)
    16 to 18.5 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    2.75 to 4.75 V
  • Breakdown Voltage - Drain-Source
    92 V
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 200 Degree C
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