ILD3135M180

RF Transistor by Integra Technologies, Inc.

Note : Your request will be directed to Integra Technologies, Inc..

The ILD3135M180 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 42.55 dBm, Power(W) 17.99 W, Duty_Cycle 0.1, Gain 11 dB. Tags: Flange. More details for ILD3135M180 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ILD3135M180
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3100 to 3500 MHz, 11 dB LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    42.55 dBm
  • Power(W)
    17.99 W
  • Peak Output Power
    180 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    11 dB
  • Power Gain (Gp)
    9.5 to 13 dB
  • Supply Voltage
    32 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    2.5 to 4 V
  • Quiescent Drain Current
    60 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.