MRF141G

RF Transistor by MACOM (189 more products)

Note : Your Quotation Request will be directed to MACOM.

The MRF141G from MACOM is a RF Transistor with Frequency 175 MHz, Power 54.77 dBm, Power(W) 299.92 W, Gain 12 dB, Supply Voltage 28 V. More details for MRF141G can be seen below.

Product Specifications

  • Part Number
    MRF141G
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, ISM, Broadcast
  • Application
    Commercial, Military
  • CW/Pulse
    Pulse
  • Frequency
    175 MHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • Gain
    12 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 to 5 Vdc
  • Drain Gate Voltage
    65 Vdc
  • Breakdown Voltage
    70 Vdc (Collector Emmiter), 4 Vdc (Emmiter base), 70 Vdc (Collector base)
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    40 Vdc
  • Leakage Current
    1 uAdc (Gate body leakage)
  • Package Type
    Flange
  • Package
    Flange Ceramic
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