The A2G26H281-04S from NXP Semiconductors is asymmetrical Doherty RF power GaN transistor that operates from 2496 to 2690 MHz. It delivers an output power of 50 Watts with a gain of 15.3 dB and drain efficiency of 57%. This transistor requires a supply voltage of 48 Volts DC and consumes 150 mA of current. It is available in a NI-780S-4L package.

Product Specifications

  • Part Number
    A2G26H281-04S
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.49 to 2.69 GHz
  • Power
    46.99 dBm
  • Power(W)
    50 W
  • CW Power
    180 to 275 W
  • Pulsed Power
    180 to 275 W
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    12.9 to 16.9 dB
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -8 V
  • Drain Efficiency
    0.609
  • Drain Current
    150 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1 °C/W
  • Package Type
    Flange
  • Package
    NI--780S--4L
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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