The A2G26H281-04S from NXP Semiconductors is asymmetrical Doherty RF power GaN transistor that operates from 2496 to 2690 MHz. It delivers an output power of 50 Watts with a gain of 15.3 dB and drain efficiency of 57%. This transistor requires a supply voltage of 48 Volts DC and consumes 150 mA of current. It is available in a NI-780S-4L package.

Product Specifications

  • Part Number
    A2G26H281-04S
  • Manufacturer
    NXP Semiconductors
  • Description
    50 W RF Power GaN Transistor from 2496 to 2690 MHz
  • Transistor Type
  • Application
    4G, WCDMA
  • Application Type
    Radar, Commercial, Cellular, EMC Testing, Medical, Jammers, Radio, Wireless Infrastructure, Base Stations
  • Class
    AB, C
  • Grade
    Commercial, Aerospace
  • Frequency
    2.496 to 2.69 GHz
  • Gain
    15.3 dB @ 2635 MHz
  • Power
    46 dBm
  • Supply Voltage
    48 V
  • Technology
    GaN
  • Effeciency
    0.57
  • Matching
    Input
  • Package Type
    Flanged
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