The A2T07D160W04S from NXP Semiconductors is a RF Transistor with Frequency 716 to 960 MHz, Power 44.77 dBm, Power(W) 29.99 W, Duty_Cycle 0.1, Power Gain (Gp) 20.2 to 23.2 dB. More details for A2T07D160W04S can be seen below.

Product Specifications

  • Part Number
    A2T07D160W04S
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    716 to 960 MHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • CW Power
    48 to 56 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    20.2 to 23.2 dB
  • VSWR
    10.00:1
  • Polarity
    N--Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.2 to 2.7 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.485
  • Drain Current
    450 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.63 °C/W
  • Package Type
    Flange
  • Package
    NI--780S--4L
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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