The A2V09H525-04N is an asymmetrical Doherty Airfast RF power LDMOS transistor that operates from 720 to 960 MHz. It delivers an output power of 120 Watts with a gain of 18.9 dB at 940 MHz and efficiency of 56.%. The device requires a supply voltage of 48 V and consumes up to 688 mA of current. The transistor is available in a flanged surface mount package that is designed for cellular base station and digital predistortion error correction system applications.

Product Specifications

    Product Details

    • Part Number :
      A2V09H525-04N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      120 W RF Power LDMOS Transistor from 720 to 960 MHz

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      720 to 960 MHz
    • Power :
      50.79 dBm
    • Power(W) :
      120 w
    • Gain :
      18.9 dB
    • Effeciency :
      56.7 %
    • Supply Voltage :
      48 V

    Technical Documents

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