The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 21.7 dB, a P1dB of 10 W, has an effeciency of 20.6% and requires a supply voltage of 28 V. It is available in a compact plastic package.

Product Specifications

    Product Details

    • Part Number :
      AFT27S010N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Cellular, Base Station, WCDMA
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      100 MHz to 3.6 GHz
    • Power :
      31 to 31 dBm
    • Power(W) :
      1.26 W
    • CW Power :
      10 to 13.9 W
    • P1dB :
      40 dBm
    • Pulsed Width :
      10 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      20 to 21.7 dB
    • Input Return Loss :
      -14 to -9 dB
    • VSWR :
      5.00:1
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      0.8 to 1.6 Vdc
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.226
    • Drain Current :
      90 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      3.5 °C/W
    • Package Type :
      Surface Mount
    • Package :
      PLD--1.5W PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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