The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 21.7 dB, a P1dB of 10 W, has an effeciency of 20.6% and requires a supply voltage of 28 V. It is available in a compact plastic package.

Product Specifications

  • Part Number
    AFT27S010N
  • Manufacturer
    NXP Semiconductors
  • Description
    728 to 2700 MHz, 1.26 W AVG., 28 V Airfast RF Power LDMOS Transistor
  • Transistor Type
  • Application
    W-CDMA
  • Application Type
    Base Stations, Wireless Infrastructure
  • Frequency
    728 to 2700 MHz
  • Gain
    21.7 dB
  • Power
    40 dBm, 10 W
  • P1dB
    40 dBm, 10 W
  • Supply Voltage
    28 V
  • Effeciency
    20.6 %
  • Matching
    Input, Output
  • Thermal Resistance
    3.5 °C/W
  • Package
    Plastic
  • RoHS
    Yes
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