The MHT1001H from NXP Semiconductors is a RF Transistor with Frequency 2.45 GHz, Power 52.79 dBm, Power(W) 190.11 W, P1dB 52.8 dBm, Duty_Cycle 0.1. More details for MHT1001H can be seen below.

Product Specifications

  • Part Number
    MHT1001H
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 190 W CW, 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.45 GHz
  • Power
    52.79 dBm
  • Power(W)
    190.11 W
  • CW Power
    190 W
  • P1dB
    52.8 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    13 to 16 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.3 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.462
  • Drain Current
    1900 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.22 °C/W
  • Package Type
    Flange
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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