The MMRF1304GNR1 from NXP Semiconductors is a RF Transistor with Frequency 1.8 MHz to 2 GHz, Gain 25.5 dB, Power 44 dBm(25 W), P1dB 25 dBm, Supply Voltage 50 V. More details for MMRF1304GNR1 can be seen below.

Product Specifications

  • Part Number
    MMRF1304GNR1
  • Manufacturer
    NXP Semiconductors
  • Description
    N-Channel LDMOS Transistor from 1.8 to 2000 MHz
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Grade
    Military, Commercial, Space
  • Frequency
    1.8 MHz to 2 GHz
  • Gain
    25.5 dB
  • Power
    44 dBm(25 W)
  • P1dB
    25 dBm
  • Supply Voltage
    50 V
  • Drain Current
    10 mA
  • Effeciency
    0.747
  • Junction Temperature (Tj)
    -40 to 225 Degree C
  • Voltage - Drain-Source (Vdss)
    -0.5 to 133 VDC
  • Voltage - Gate-Source (Vgs)
    -6.0 to 10 Vdc
  • Thermal Resistance
    1.2 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.