The MRF8P8300H from NXP Semiconductors is a RF Transistor with Frequency 790 to 820 MHz, Power 49.82 dBm, Power(W) 95.94 W, P1dB 55.3 dBm, Duty_Cycle 0.1. More details for MRF8P8300H can be seen below.

Product Specifications

  • Part Number
    MRF8P8300H
  • Manufacturer
    NXP Semiconductors
  • Description
    Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    790 to 820 MHz
  • Power
    49.82 dBm
  • Power(W)
    95.94 W
  • CW Power
    2.5 W
  • P1dB
    55.3 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    20 to 23.5 dB
  • Input Return Loss
    -12 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.357
  • Drain Current
    2000 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.26 °C/W
  • Package Type
    Flange
  • Package
    NI--1230--4H
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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