The MRF8S9170N from NXP Semiconductors is a RF Transistor with Frequency 920 to 960 MHz, Gain 19.3 dB at 19.3 MHz, Power 177 W, P1dB 177 W, Supply Voltage 28 V. More details for MRF8S9170N can be seen below.

Product Specifications

  • Part Number
    MRF8S9170N
  • Manufacturer
    NXP Semiconductors
  • Description
    920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    920 to 960 MHz
  • Gain
    19.3 dB at 19.3 MHz
  • Power
    177 W
  • P1dB
    177 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.38 °CW
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