The MRFX1K80N is a 65 V LDMOS transistor that operates from 1.8 to 400 MHz. It delivers an output power of up to 1800 W CW with an efficiency of more than 64.9 % and a gain of over 22.8 dB. The device can be used single-ended or in a push-pull configuration and is also suitable for linear applications with appropriate biasing. It is available in a surface mount package and is ideal for high VSWR industrial, scientific and medical applications, radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. This transistor is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch. The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance.

Product Specifications

    Product Details

    • Part Number :
      MRFX1K80N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      1800 W CW, LDMOS Transistor from 1.8 to 400 MHz

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      ISM, Aerospace & Defence, Radar, Wireless Infrastructure
    • Application :
      Broadcast, ISM, Military, Medical, Industrialf
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      1.8 to 400 MHz
    • Power :
      62.55 dBm
    • Power(W) :
      1800 W
    • Pulsed Width :
      100 us
    • Power Gain (Gp) :
      24. to 25.1 dB
    • Effeciency :
      75.7 %
    • Input Return Loss :
      -14.4 to -9 dB
    • Class :
      AB
    • Polarity :
      N-Channel
    • Supply Voltage :
      65 V
    • Threshold Voltage :
      2.1 to 2.9 V
    • Breakdown Voltage - Drain-Source :
      179 to 193 V
    • Drain Efficiency :
      70 to 75.1 %`
    • Feedback Capacitance :
      5.6 pF
    • Input Capacitance :
      760 pF
    • Output Capacitance :
      203 pF
    • Thermal Resistance :
      0.06 Degree C/ Watt
    • Package Type :
      Flanged
    • Package :
      OM--1230--4L
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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