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MRFX600H

RF Transistor by NXP Semiconductors

The MRFX600H is a 65 V LDMOS transistor that operates from 1.8 to 400 MHz. It delivers an output power of up to 600 W CW with an efficiency of more than 83% and a gain of over 21.3 dB. The device can be used in a single-ended or push-pull configuration and is also suitable for linear applications with appropriate biasing. It is available in a surface mount package and is ideal for rugged industrial, medical, broadcast, aerospace and mobile radio applications. This transistor is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch.

Product Specifications

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Product Details

  • Part Number
    MRFX600H
  • Manufacturer
    NXP Semiconductors
  • Description
    65 V LDMOS Transistor from 1.8 to 400 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    1.8 to 400 MHz
  • Power
    57.78 dBm
  • Power(W)
    600 W
  • P1dB
    600 W
  • Power Gain (Gp)
    24.5 to 27.5 dB
  • Efficiency
    74.4 %
  • Class
    AB
  • Supply Voltage
    65 V
  • Breakdown Voltage - Drain-Source
    179 to 193 V
  • Gate Leakage Current (Ig)
    1 uA
  • Operating Temperature
    -40 to 150 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents

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