LY2542LB Image

LY2542LB

Note : Your request will be directed to Polyfet RF Devices.

The LY2542LB from Polyfet RF Devices is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 59.03 dBm, Power(W) 800 W, Power Gain (Gp) 13 dB, VSWR 1.10:1. Tags: Flange. More details for LY2542LB can be seen below.

Product Specifications

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Product Details

  • Part Number
    LY2542LB
  • Manufacturer
    Polyfet RF Devices
  • Description
    RF Power LDMOS Transistor from 960 to 1215 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    59.03 dBm
  • Power(W)
    800 W
  • Power Gain (Gp)
    13 dB
  • Transconductance
    16 Mho
  • VSWR
    1.10:1
  • Supply Voltage
    40 to 50 VDC
  • Drain Gate Voltage
    110 V
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Drain-Source (Vdss)
    110 V
  • Voltage - Gate-Source (Vgs)
    -9 to 11 V
  • Drain Efficiency
    45%
  • Drain Current
    22 A
  • Drain Bias Current
    4 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    875 W
  • Lead Free
    Yes
  • Feedback Capacitance
    2.2 pF
  • Input Capacitance
    320 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    525 pF
  • Thermal Resistance
    0.02 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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