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QPD1035L

RF Transistor by Qorvo
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The QPD1035L from Qorvo is a RF Transistor with Frequency DC to 6 GHz, Power 45.6 to 47.1 dBm, Power(W) 36.30 to 51.28 W, Duty_Cycle 0.1, Gain 11.5 to 15.3 dB. Tags: Surface Mount. More details for QPD1035L can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD1035L
  • Manufacturer
    Qorvo
  • Description
    GaN RF Power Transistor from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Military, Radar, Communication, Broadcast
  • Application
    Radio, Test & Instrumentation, Jammers
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    45.6 to 47.1 dBm
  • Power(W)
    36.30 to 51.28 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    11.5 to 15.3 dB
  • VSWR
    1.10:1
  • Class
    Class 0B, Class C3
  • Supply Voltage
    50 V
  • Input Power
    38.2 dBm
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -2.5 V
  • Drain Efficiency
    45.4 to 59.3 %
  • Drain Current
    2100 mA
  • Drain Bias Current
    65 mA
  • Power Dissipation (Pdiss)
    50.4 W
  • Package Type
    Surface Mount View all
  • RoHS
    Yes
  • Grade
    Military View all
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Linear Gain: 14.7 to 15.3 dB

Technical Documents
View details on the manufacturer's website
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