T2G4003532-FL Image


RF Transistor by Qorvo (85 more products)

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The T2G4003532-FL from TriQuint is a 30 W (P3dB) discrete GaN transistor that operates from DC to 3.5 GHz. It has a gain of 21.6 dB and a PAE (P3dB) of 57.6.7% at 3.5 GHz. This GaN HEMT transistor requires a 32 V supply to operate and is available in surface mount package. It can be used for Military, Radar, Communication, Test Instrumentation applications.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    30W, 32V DC to 3.5 GHz, GaN RF Flangeless Power Transistor for Military, Civilian Radars, Test Intrumentation and Jammers Applications
  • Transistor Type
  • Application Type
    Military, Radar, Communication, Test Instrumentation
  • Grade
  • Frequency
    DC to 3.5 GHz
  • Gain
    16 to 21.6 dB
  • Power
    43.98 to 44.91 dBm
  • Drain Efficiency
    51% to 59.7%
  • Drain Current
    1900 mA
  • Power Added Effeciency
    45.5% to 57.6%
  • VSWR
  • Voltage - Drain-Source (Vdss)
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Package Type
    Surface Mount
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