TGF3020-SM Image

TGF3020-SM

RF Transistor by Qorvo (88 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF3020-SM from Triquint is a GaN on SiC HEMT transistor that operates from 4 GHz to 6 GHz. It provides up to 5 W of power with a gain of 12.7 dB and efficiency of 59.6 %. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in C-band radar, communications system, telemetry, communications system, wideband power amplifiers and test instrumentation applications.

Product Specifications

  • Part Number
    TGF3020-SM
  • Manufacturer
    Qorvo
  • Description
    5 Watt GaN HEMT from 4 GHz to 6 GHz
  • Transistor Type
  • Application
    C-band
  • Application Type
    Telemetry, Radar, Test & Measurement
  • Grade
    Commercial, Military
  • Frequency
    4.0 to 6.0 GHz
  • Gain
    12.7 dB
  • Power
    38.4 dBm(6.9 W)
  • Input Power
    30 dBm (1 W)
  • Supply Voltage
    32 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Current
    0.6 A
  • Power Added Effeciency
    0.596
  • Technology
    GaN
  • Power Dissipation (Pdiss)
    7.5 W
  • Saturated Power
    38.4 dBm
  • Voltage - Drain-Source (Vdss)
    32 V
  • Voltage - Gate-Source (Vgs)
    -50 to 0 V
  • Package Type
    Surface Mount
  • Dimension
    3 x 3 mm
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Tags
    GaN Transistors IMS 2015
  • Note
    Gate Current:- -1.25 to 2.1 mA
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