TGF3020-SM

RF Transistor by Qorvo (92 more products)

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The TGF3020-SM from Triquint is a GaN on SiC HEMT transistor that operates from 4 GHz to 6 GHz. It provides up to 5 W of power with a gain of 12.7 dB and efficiency of 59.6 %. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in C-band radar, communications system, telemetry, communications system, wideband power amplifiers and test instrumentation applications.

Product Specifications

  • Part Number
    TGF3020-SM
  • Manufacturer
    Qorvo
  • Description
    5 Watt GaN HEMT from 4 GHz to 6 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, ISM, Test & Measurement
  • Application
    Communication, Test Instrumentation
  • CW/Pulse
    Pulse, CW
  • Frequency
    4 to 6 GHz
  • Power
    36.99 dBm
  • Power(W)
    5 W
  • Saturated Power
    38.3 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    12.7 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Quiescent Drain Current
    25 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • Package
    3 x 3 mm
  • RoHS
    Yes
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