The TGF3020-SM from Triquint is a GaN on SiC HEMT transistor that operates from 4 GHz to 6 GHz. It provides up to 5 W of power with a gain of 12.7 dB and efficiency of 59.6 %. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in C-band radar, communications system, telemetry, communications system, wideband power amplifiers and test instrumentation applications.