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GRF0030

RF Transistor by Guerrilla RF
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The GRF0030 from Guerrilla RF is a RF Transistor with Frequency DC to 6 GHz, Power 46.6 to 46.99 dBm, Power(W) 45.7 to 50 W, Saturated Power 46.6 dBm, Duty_Cycle 0.1. Tags: Surface Mount. More details for GRF0030 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GRF0030
  • Manufacturer
    Guerrilla RF
  • Description
    GaN on SiC HEMT Transistor from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Wireless Infrastructure, Radar, Cellular, Test & Measurement
  • Application
    Test & Instrumentation View all
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    46.6 to 46.99 dBm
  • Power(W)
    45.7 to 50 W
  • Saturated Power
    46.6 dBm
  • Pulsed Width
    100 µs
  • Duty_Cycle
    0.1
  • Gain
    10.9 to 15.3 dB
  • Small Signal Gain
    12.1 to 12.8 dB
  • Power Gain (Gp)
    13.4 to 15.3 dB
  • Supply Voltage
    28 to 50 V
  • Threshold Voltage
    -3.4 to -1.5 V
  • Breakdown Voltage
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    60 to 60.4 %
  • Drain Current
    1600 mA
  • Drain Leakage Current (Id)
    50 µA
  • Quiescent Drain Current
    50 mA
  • Gate Leakage Current (Ig)
    10 µA
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount View all
  • Package
    QFN-16
  • Dimension
    3 x 3 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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