QPD1035

The QPD1035 from Qorvo is a GaN RF Power Transistor that operates from DC to 6 GHz. It delivers a P3dB output power of up to 50 W (57.1 dBm) with a linear gain of 15.1 dB and a drain efficiency of up to 59.3%. This discrete GaN on SiC HEMT has an input pre-match that is ideal for broadband amplifier applications, supporting both pulsed and continuous-wave (CW) operations. It requires a DC supply of +50 V and consumes 65 mA of current. This transistor is available in a low-thermal-resistance ceramic package that measures 0.200 x 0.160 x 0.128 inches. It is ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications.